| 摘要 |
The present invention is a memory circuit that includes a bistable circuit that stores data, and a ferromagnetic tunnel junction device that nonvolatilely stores the data in the bistable circuit according to a magnetization direction of a ferromagnetic electrode free layer, the data nonvolatilely stored in the ferromagnetic tunnel junction device being able to be restored in the bistable circuit. According to the present invention, writing data to and reading data from the bistable circuit can be performed at high speed. In addition, even though a power source is shut down, it is possible to restore data nonvolatilely stored in the ferromagnetic tunnel junction devices to the bistable circuit.
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