| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a low threshold value, low light absorption, and high efficiency. <P>SOLUTION: The semiconductor laser device comprises a first electrode 134, a second electrode 131, a first reflector 102, a second reflector 140, and resonator 110. The resonator 110 comprises an active layer 105, a first region 107b in which current flows, a current path restriction layer 107 having a second region 107a restricting current flow, and first semiconductor layers 111 and 112. The first semiconductor layers 111 and 112 comprise a second semiconductor layer 121 and a third semiconductor layer 122. The second semiconductor layer 121 is provided nearer the second electrode 131 than the third semiconductor layer 122. The doping concentration of the second semiconductor layer 121 and the third semiconductor layer 122 is higher than that of the first semiconductor layers 111 and 112. The product of the electric conductivity and the film thickness of the second semiconductor layer 122 is higher than that of the third semiconductor layer 121. <P>COPYRIGHT: (C)2012,JPO&INPIT |
