ORGANIC THIN-FILM TRANSISTOR HAVING IMPROVED CHARGE INJECTABILITY, AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to an organic thin-film transistor in which a solution of CS2CO3 is applied to only one of the source/drain electrodes on a substrate to thereby improve electron injectability, and to a complementary metal oxide semiconductor (CMOS) digital circuit using same. The organic thin-film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate dielectric disposed over the substrate that includes the gate electrode; source/drain electrodes disposed separately on portions of the gate dielectric; an electron-injection layer applied to one of the source/drain electrodes; and an organic semiconductor layer disposed on the substrate that includes the electron-injection layer.