| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in good productivity, in which a plurality of electrodes provided on a mother board and a plurality of electrodes provided on the surface of a laminate device are joined reliably. <P>SOLUTION: There is provided a manufacturing method of a semiconductor device which is configured by joining a plurality of electrodes provided on a mother board and a plurality of electrodes provided on the surface of a laminate device. A protection member is attached by pasting on the surface of a laminate wafer on whose surface a plurality of laminate devices are formed, a backside of the laminate wafer is ground to be given a predetermined thickness, a surface of a reinforcement wafer is joined with the backside of the laminate wafer using a bond agent, and the laminate wafer is divided along with the reinforcement wafer. The method includes a laminate wafer division process in which the individual laminate devices on whose backside the reinforcement wafer is joined are formed, a laminate device joining process in which the plurality of electrodes provided on the surface of the laminate device are joined with the plurality of electrodes provided on the mother board, and a process of grinding the reinforcement wafer joined on the backside of the laminate device to remove the reinforced wafer from the backside of the laminate device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
