METHOD FOR THE FORMATION OF MULTI COMPONENT THIN FILMS AND QUANTUM WELL STRUCTURE CONTAINING MULTI COMPONENT BY SUB-LATTICE STRUCTURE CONTROLLING TECHNIQUE THROUGH PLASMA-ENHANCED ATOMIC LAYER DEPOSITION

摘要

PURPOSE: A method for manufacturing a multi component thin film for an ultraviolet light emitting device with a sub-lattice structure using a plasma atomic layer deposition method and a method for forming a quantum well using the same are provided to emit high efficiency light by eliminating a crack or deformity and precisely controlling the thickness and composition of a thin film. CONSTITUTION: An InN(Indium) is formed in a reaction substrate. An AlN(Aluminum Nitride) layer is formed in the reaction substrate. A GaN layer is formed in the reaction substrate. An InxAlyGazN(Indium, Aluminum, Gallium, Nitrogen) thin film is formed in the reaction substrate and has the component ratio of 0<=x<0.2, 0.1<y<=1, 0<z<0.9, x+y+z=1.