Methods for forming back contact electrodes for cadmium telluride photovoltaic cells

摘要

METHODS FOR FORMING BACK CONTACT ELECTRODES FOR CADMIUM TELLURIDE PHOTOVOLTAIC CELLS A method for forming a back contact (12) for a photovoltaic cell (10) that includes at least one semiconductor layer (14) is provided. The method includes applying a continuous film (16) of a chemically active material on a surface (15) of the semiconductor layer (14) and activating the chemically active material such that the activated material etches the surface (15) of the semiconductor layer (14). The method further includes removing the continuous film (16) of the activated material from the photovoltaic cell (10) and depositing a metal contact layer (18) on the etched surface (15) of the semiconductor layer. Applying a continuous film of a chemically active material on a surface of the semiconductor layer S, 32 Activating the chemically active material such that the activated material etches the surface of the semiconductor layer , 34 Removing the continuous film of the active material from the photovoltaic cellly Depositing a metal contact layer on the etched the surface of the semiconductor layer Fig. 5 Depositing a metal layer (or metal salt solution) on the etched the surface of the semiconductor layer Fg30 Applying a continuous film of a chemically active material on a surface of the semiconductor layer Activating the chemically active material such that the activated material etches the surface of the semiconductor layer I Removing the continuous film of the active material from the photovoltaic cell Depositing a metal contact layer on the L etched the surface of the semiconductor layer Fig. 6