| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can effectively prevent its lower electrodes from falling during the manufacturing process, permits achievement of a micro size and can be manufactured in a high yield, and a manufacturing method therefor. <P>SOLUTION: A manufacturing method for a semiconductor device provided with a capacitor element Ca having lower electrodes 13 and an upper electrode 15 arranged opposite to the lower electrode 13 with a capacitance insulating film in-between, wherein the step of forming the capacitor element Ca has a step of so forming a supporting part 14S of silicon oxide containing no impurities in a part of a region not overlapping the lower electrodes 13 in a planar view that outer walls 13B of the plurality of lower electrodes 13 having the outer walls 13B embedded in an inter-layer insulating film 12 of silicon oxide containing impurities and extending in the thickness direction of a substrate 1 come into contact with the outer walls 13B and link two or more adjoining lower electrodes 13, and a step of removing the inter-layer insulating film 12 by wet etching and exposing the outer walls 13B. <P>COPYRIGHT: (C)2012,JPO&INPIT |
