发明名称 FAILURE ANALYSIS APPARATUS AND FAILURE ANALYSIS METHOD
摘要 <P>PROBLEM TO BE SOLVED: To search a high resolution image of a semiconductor integrated circuit and to narrow down failure spots with high precision. <P>SOLUTION: The failure analysis apparatus comprises an X-ray generating part for irradiating X-ray to the semiconductor integrated circuit; a movable scintillator for transforming x-ray transmitting through the semiconductor integrated circuit into light; and a photodetection part for detecting the light transformed by the scintillator and a photoemission light generated from the semiconductor integrated circuit in which a voltage is applied. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011228354(A) 申请公布日期 2011.11.10
申请号 JP20100094291 申请日期 2010.04.15
申请人 RENESAS ELECTRONICS CORP 发明人
分类号 H01L21/66;G01R31/302 主分类号 H01L21/66
代理机构 代理人
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