| 摘要 |
A device, system, and method for a thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in may demonstrate higher open circuit voltage are disclosed herein. An exemplary thin silicon solar cell structure has a p+ silicon substrate. A dielectric layer is disposed over the p+ silicon substrate. One or more trenches are defined within the dielectric layer. A thin n type silicon layer is grown on the p+ silicon substrate within the trench by epitaxial lateral overgrowth wherein a junction area of the solar cell is minimized.
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