| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of maintaining the characteristic of a transistor T while improving an area utilization efficiency, with a low forward direction voltage of a rectifier element D. <P>SOLUTION: A semiconductor device 1 includes the rectifier element D and the transistor T. The rectifier element D includes: a current path 43; a first main electrode 11 disposed on one end of the current path 43, having a rectification function; a second main electrode 12 disposed on the other end thereof; and a first auxiliary electrode 15 disposed between the first main electrode 11 and the second main electrode 12, and having a larger forward direction voltage as compared to the first main electrode 11. The transistor T includes: a current path 43; a third main electrode 13 disposed on one end of the current path 43 in the direction intersecting with the current path 43; a control electrode 14 disposed surrounding the third electrode 13; and the second main electrode 12. <P>COPYRIGHT: (C)2012,JPO&INPIT |
