发明名称 |
Hydrazine-free solution deposition of chalcogenide films |
摘要 |
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing additive to form a solution of a complex thereof; applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate; removing the solvent from the coating to produce a film of the complex on the substrate; and thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate. Also provided is a process for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin-film field-effect transistor device using the metal chalcogenides as the channel layer.
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申请公布号 |
US8053772(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20090549297 |
申请日期 |
2009.08.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MITZI DAVID B.;COPEL MATTHEW W. |
分类号 |
H01L29/04;H01L21/336;H01L29/786 |
主分类号 |
H01L29/04 |
代理机构 |
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主权项 |
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地址 |
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