| 发明名称 |
Silicon carbide semiconductor device and method for manufacturing the same |
| 摘要 |
A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.
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| 申请公布号 |
US8053784(B2) |
申请公布日期 |
2011.11.08 |
| 申请号 |
US20070376362 |
申请日期 |
2007.08.07 |
| 申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;JAPAN FINE CERAMICS CENTER |
发明人 |
SEKI AKINORI;TANI YUKARI;SHIBATA NORIYOSHI |
| 分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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