发明名称 |
Semiconductor device and method of manufacturing semiconductor device |
摘要 |
The disclosure concerns a method of manufacturing a semiconductor device including forming a plurality of fins made of a semiconductor material on an insulating layer; forming a gate insulating film on side surfaces of the plurality of fins; and forming a gate electrode on the gate insulating film in such a manner that a compressive stress is applied to a side surface of a first fin which is used in an NMOSFET among the plurality of fins in a direction perpendicular to the side surface and a tensile stress is applied to a side surface of a second fin which is used in a PMOSFET among the plurality of fins in a direction perpendicular to the side surface.
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申请公布号 |
US8053292(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20100805533 |
申请日期 |
2010.08.04 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KANEKO AKIO;YAGISHITA ATSUSHI;INABA SATOSHI |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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