NON VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
PURPOSE: A non volatile memory device and a method for manufacturing the same are provided to reduce an area required for a drain selection line by simplifying an electrode wiring process. CONSTITUTION: In a non volatile memory device and a method for manufacturing the same, a bit line(112) is connected to each active layer of the bit line connection. The bit line is connected to each active layer through a bit line plug(111). The bit line vertically is crossed with the word line(11). The bit line is formed in upper part of a string layer(103). One bit line is connected to all strings(103A) which are identical. The drain select line is connected to a plug(109) which is arranged in vertical direction.
申请公布号
KR20110121332(A)
申请公布日期
2011.11.07
申请号
KR20100040884
申请日期
2010.04.30
申请人
HYNIX SEMICONDUCTOR INC.;IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
发明人
KIM, SUK GOO;LEE, SEUNG BECK;LEE, JUN HYUK;OH, SEUL KI