METHOD FOR FABRICATING GATE OXIDE LAYER OF TRANSISTOR BY USING HYBRIDE OXIDATION

摘要

PURPOSE: A gate dielectric layer formation method of a transistor which uses hybrid oxidation is provided to increase the thickness of a gate dielectric layer in a floor part or lateral wall of a recess part, thereby improving refresh properties of DRAM(Dynamic Random Access Memory) transistor. CONSTITUTION: A recess part(201) is arranged in an active area of a semiconductor substrate. A sacrificial plasma oxidation process is performed on the surface of the recess part and active area in order to eliminate a damaged layer and impurities. A sacrificial oxidation film is dry-etched. A first gate dielectric layer(320) is arranged by performing plasma oxidation on the upper surface of the recess part and active area. A gate dielectric layer is arranged by arranging a second gate dielectric layer(330) on the first gate dielectric layer using radical oxidation.