POLISHING SLURRY, AND POLISHING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a polishing technology capable of polishing with high efficiency and with high surface accuracy silicon carbide difficult to be polished.

SOLUTION: Abrasive particles in a polishing slurry for polishing a substrate are mainly composed of a manganese oxide. The content of the abrasive particles is less than 10 wt.% against the polishing slurry. Preferably, the pH of the polishing slurry is 7 or higher, and more preferably a manganese dioxide is used as the abrasive particles.

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