| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device of high yield by preventing apparent abnormality of a rear surface electrode and by improving reliability of the semiconductor device. <P>SOLUTION: A rear surface electrode is formed on the rear surface of a semiconductor wafer 20. The semiconductor wafer 20 is in such state as deflected to protrude to the front surface side because of the rear surface electrode. Then, the rear surface of the semiconductor wafer 20 is subjected to a plasma treatment, so that objects sticking to the rear surface of the semiconductor wafer 20 are removed. Then, a peeling tape 23 is attached on the rear surface of the semiconductor wafer 20, following the deflection of the semiconductor wafer 20. Even after the peeling tape 23 is attached, the semiconductor wafer 20 keeps the state of deflection that protrudes to the front surface side. Then, an electroless plating process is performed to form a plating film 26 on the front surface of the semiconductor wafer 20. Then the peeling tape 23 is removed from the semiconductor wafer 20. After that, a semiconductor chip is cut out of the semiconductor wafer 20, and the semiconductor chip is mounted by solder-jointing to manufacture the semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
