MANUFACTURING METHOD FOR EPITAXIAL WAFER, EPITAXIAL WAFER, AND MANUFACTURING METHOD FOR IMAGING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for an epitaxial wafer that can form a silicon epitaxial layer substantially without defect, an epitaxial wafer manufactured by the method, and a manufacturing method for an imaging device.

SOLUTION: The manufacturing method for an epitaxial wafer comprises: RIE elimination step of eliminating defects that are detected by the RIE method and measurable in an area up to at least 0.5 μm depth from the surface of the silicon substrate, by applying rapid heat treatment to the silicon substrate; and a step of forming the silicon epitaxial layer on the surface of the silicon substrate where defects having been detected by the RIE method are eliminated.

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