| 发明名称 |
REFLECTIVE TYPE EUV BLANKMASK, PHOTOMASK AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>PURPOSE: A reflective blank mask for an extreme ultraviolet radiation, a photomask, and a manufacturing method thereof are provided to improve resolution by forming an organic thin film and a hard mask film which are composed of an organic compound, which includes a strong acid, as a main component at the lower part of a resist film. CONSTITUTION: A reflective film(20) is formed on a transparent substrate(10). An absorption film(30) is formed on the reflective film. A hard mask film(40) is formed on the absorption film. The organic thin film(50) including a strong acid is formed on a hard mask film. A resist film(60) is formed on the organic thin film.</p> |
| 申请公布号 |
KR20110120785(A) |
申请公布日期 |
2011.11.04 |
| 申请号 |
KR20100040355 |
申请日期 |
2010.04.29 |
| 申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;YANG, SIN JU;YANG, CHUL KYU;KWON, SOON GI |
| 分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
| 代理机构 |
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