| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solar cell, made from a compound semiconductor layer hetero-epitaxially grown on a substrate though, which permits a carrier generated by absorbing sunlight spectrum to be extracted efficiently without causing it to recombine in a dislocation-related trap. <P>SOLUTION: The solar cell of the present invention comprises a substrate 102 having a principal plane and a first conductivity-type In<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>P(0<x≥1) formed on the substrate 102, a light absorbing layer 103 having a plurality of regions with mutually different In composition ratios and a second conductivity-type In<SB POS="POST">y</SB>Ga<SB POS="POST">1-y</SB>P(0<y≥1), different from the first conductivity type, which is formed on the light absorbing layer 103, and a light absorbing layer 104 having a plurality of regions with mutually different In composition ratios, wherein the respective plural regions of the light absorbing layer 103 and the respective plural regions of the light absorbing layer 104 are distributed in the form of quantum dots in-plane parallel to the principal plane. <P>COPYRIGHT: (C)2012,JPO&INPIT |
