| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve such a problem that an electron beam lithography method and an EUV exposure method have been developed conventionally in order to draw a circuit having a line width of tens of nanometers, but the system itself is extremely expensive and running cost is great. <P>SOLUTION: A mask for lithography or a resist film having a circuit pattern can be produced easily at low cost by simply applying the same to a mold. Since production, movement, lithography work, and cleaning are performed integrally with its retention mechanism, the resist film having a circuit pattern for lithography can be made extremely thin and can cope with warpage of a wafer at the time of contact exposure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
