NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

PURPOSE: A non-volatile memory device using a register is provided to increase the effectiveness of repair by including a redundancy block. CONSTITUTION: In a non-volatile memory device using a register, a memory cell array(100) comprises a plurality of memory cells. A first circuit block(400) is arranged in one side of the memory cell array. The first circuit block performs a first operation in the memory cell. A second circuit block(300) is arranged in the other side of the memory cell array. A second circuit block performs a second operation in the memory cell. A redundancy block(200) generates the redundancy control signal. The redundancy control signal is provide to first and second circuit blocks.