NITRIDE SEMICONDUCTOR TRANSISTOR

摘要

Disclosed is a nitride semiconductor transistor which comprises: a heterojunction layer (124) wherein a plurality of nitride semiconductor layers with mutually different polarization are laminated; and a gate electrode (113) formed on top of the heterojunction layer (124). An electron current suppression layer (125), which has p-type conductivity, carries a hole current and suppresses an electron current, is formed between the heterojunction layer and the gate electrode.