PUNCH-THROUGH SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

A maximum-punch-through semiconductor device (1) such as an insulated gate bipolar transistor (IGBT) or a diode and a method for producing same are proposed. The MPT semiconductor device (1) comprises at least a two-layer structure having layers in the following order: an emitter metallization (3), a channel region (10), a base layer (4) with a predetermined doping concentration ND, a buffer layer (5) and a collector metallization (7). A thickness W of the base layer is determined by Formula (I), wherein a punch-through voltage Vpt of the semiconductor device is between 70 % and 99 % of a break down voltage Vbd of the semiconductor device, and wherein the thickness W is a minimum thickness of the base layer (4) between the junction to the channel region (10) and the buffer layer (5). With the design rule provided, an IGBT or diode having low electrical losses and soft turn-off characteristics may be provided. A shallow buffer layer (5) having a thickness of less than 10 µm may be used. Such thin buffer layer may be easily produced using for example ion implantation techniques.