| 摘要 |
<p>PURPOSE: A poly-crystal silicon manufacturing method is provided to minimize metal contamination, thereby uniformly crystallizing whole amorphous silicon. CONSTITUTION: A poly-crystal silicon manufacturing method is comprised of the following steps. Amorphous silicon(20) is arranged on a substrate(10). A metal(40) is attached on the amorphous silicon with a less than one cover ratio. The metal comprises one of Ni, Al, Ti, Ag, Au, Co, Sb, Pd, and Cu or two or more of the same. The amorphous silicon is processed with plasma. The amorphous silicon is heat-treated with crystallization.</p> |
