SEMICONDUCTOR DEVICE INCLUDING A STRESS BUFFER MATERIAL FORMED ABOVE A LOW-K METALLIZATION SYSTEM

摘要

A bump structure or pillar structure formed above a metallization system of a complex semiconductor device may include a stress buffer layer (260), which may efficiently distribute the resulting mechanical stress which may typically occur during the chip package interaction due to a thermal mismatch of these components. The stress buffer layer (260) comprises copper-based buffer regions (265) that cover a significant portion of the overall surface, wherein a thickness of approximately 3- 10 µm may also be used. Moreover, the buffer regions (265) may efficiently replace aluminum as a terminal metal active region.