发明名称 |
LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
摘要 |
A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.
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申请公布号 |
US2011266552(A1) |
申请公布日期 |
2011.11.03 |
申请号 |
US20110986186 |
申请日期 |
2011.01.07 |
申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
TU PO-MIN;HUANG SHIH-CHENG;YANG SHUN-KUEI;HUANG CHIA-HUNG |
分类号 |
H01L33/30;H01L33/44 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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