| 摘要 |
<p>A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processing gas toward the wafer, a main body of the shower plate being made of aluminum or an aluminum alloy. With the apparatus, a film is deposited on the surface of the wafer, the film having a low thermal expansion coefficient, measured at the film deposition temperature, lower by at least about 5×10 -6 /°C than a thermal expansion coefficient of the main body of the shower plate. The shower plate has an anodized film having a thickness of 10 µm or thicker formed on the side of the main body facing the susceptor.</p> |
