发明名称 |
Semiconductor device with a main base region |
摘要 |
The present invention relates to a semiconductor device and has an object to enhance a di / dt tolerance and a dV / dt tolerance without increasing an ON resistance.
In order to achieve the object described above, an underpad base region (5) provided on a region in an upper main surface of a semiconductor substrate (1) which is provided under a gate pad (12) is not connected to a source electrode (11) and is not coupled to a main base region (4) connected to the source electrode (11). More specifically, the underpad base region (5) is brought into a floating state. Furthermore, the main base region (4) has a projection (20) protruding from a bottom surface of said main base region (4) toward a lower main surface of the device. |
申请公布号 |
EP2383788(A1) |
申请公布日期 |
2011.11.02 |
申请号 |
EP20110174230 |
申请日期 |
2001.04.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HATADE, KAZUNARI;HISAMOTO, YOSHIAKI |
分类号 |
H01L29/78;H01L21/336;H01L27/00;H01L29/06;H01L29/08;H01L29/10;H01L29/40;H01L29/423;H01L29/739 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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