发明名称 |
Non-volatile memory and method for linear estimation of initial programming voltage |
摘要 |
<p>Non-Volatile Memory and Method for linear Estimation of Initial Programming Voltage In a non-volatile memory, a selected page on a word line is successively programmed by a series of voltage pulses of a staircase waveform with verifications in between the pulses until the page is verified to a designated pattern. The programming voltage at the time the page is programmed verified will be to estimate the initial value of a starting programming voltage for the page. The estimation is further refined by using the estimate from a first pass in a second pass. Also, when the test is over multiple blocks, sampling of word lines based on similar geometrical locations of the blocks can yield a starting programming voltage optimized for faster programming pages.</p> |
申请公布号 |
EP2383748(A2) |
申请公布日期 |
2011.11.02 |
申请号 |
EP20110175624 |
申请日期 |
2007.08.31 |
申请人 |
SANDISK CORPORATION |
发明人 |
TU, LOC;HOOK, CHARLES MOANA;LI, YAN |
分类号 |
G11C16/04;G11C11/56;G11C16/10;G11C16/12;G11C16/34;G11C29/02;G11C29/50 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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