发明名称 Non-volatile memory and method for linear estimation of initial programming voltage
摘要 <p>Non-Volatile Memory and Method for linear Estimation of Initial Programming Voltage In a non-volatile memory, a selected page on a word line is successively programmed by a series of voltage pulses of a staircase waveform with verifications in between the pulses until the page is verified to a designated pattern. The programming voltage at the time the page is programmed verified will be to estimate the initial value of a starting programming voltage for the page. The estimation is further refined by using the estimate from a first pass in a second pass. Also, when the test is over multiple blocks, sampling of word lines based on similar geometrical locations of the blocks can yield a starting programming voltage optimized for faster programming pages.</p>
申请公布号 EP2383748(A2) 申请公布日期 2011.11.02
申请号 EP20110175624 申请日期 2007.08.31
申请人 SANDISK CORPORATION 发明人 TU, LOC;HOOK, CHARLES MOANA;LI, YAN
分类号 G11C16/04;G11C11/56;G11C16/10;G11C16/12;G11C16/34;G11C29/02;G11C29/50 主分类号 G11C16/04
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