SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A semiconductor device and a forming method thereof are provided to improve the properties of a semiconductor device by increasing an overlay margin between a storage electrode contact plug and a storage electrode. CONSTITUTION: A gate(106) is formed on a semiconductor substrate(100) including an active area(104). A first spacer(108) is formed on the sidewall of the gate. A first storage electrode contact plug(114) is formed on the lower side of the sidewall of the first spacer. A second spacer(116) is formed on the upper side of the first storage electrode contact plug. A second storage electrode contact plug(118) is formed on the upper side of the first storage electrode contact plug.