发明名称 |
Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof |
摘要 |
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer 30 composed of a high concentration layer 3b made of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layer 3a made of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer 3b; and a group III nitride semiconductor layer 2, and the lower concentration layer 3a and the high concentration layer 3b are continuously formed on the group III nitride semiconductor layer 2 in this order to form the group III nitride semiconductor light emitting device. |
申请公布号 |
US8049227(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20070293918 |
申请日期 |
2007.03.23 |
申请人 |
SHOWA DENKO K.K. |
发明人 |
MIKI HISAYUKI;SAKAI HIROMITSU |
分类号 |
H01L33/00;H01L33/06;H01L33/32;H01L33/54;H01L33/56;H01L33/60;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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