发明名称 |
Plasma processing apparatus and control method thereof |
摘要 |
In a plasma processing apparatus for processing an object to be processed by generating plasma in a processing chamber: a first electrode is arranged in the processing chamber and a second electrode is arranged to face the first electrode in the processing chamber; a first and a second power systems include a first and a second power supplies for supplying a first and a second powers to the first and the second electrodes, respectively; and a control unit controls both or either one of the first and the second power systems so as to apply a preprocessing voltage to the second electrode for a time period before plasma processing is performed on the object.
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申请公布号 |
US8048327(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20080031531 |
申请日期 |
2008.02.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOSHIISHI AKIRA;KITANO MASATOSHI |
分类号 |
G01L21/30;B01J19/08;B01J19/12;C23F1/00;C23F4/00;H01J37/32;H01L21/00;H01L21/205;H01L21/3065;H05H1/46 |
主分类号 |
G01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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