发明名称 |
Integrated circuit on high performance chip |
摘要 |
A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors. |
申请公布号 |
US8048766(B2) |
申请公布日期 |
2011.11.01 |
申请号 |
US20050561299 |
申请日期 |
2005.12.15 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
JOLY JEAN-PIERRE;ULMER LAURENT;PARAT GUY |
分类号 |
H01L21/30;B81B7/00;B81B7/02;H01L21/02;H01L21/20;H01L21/46;H01L21/822;H01L21/98;H01L25/16;H01L27/06;H01L27/08;H01L29/06 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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