发明名称 Integrated circuit on high performance chip
摘要 A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such as perovskites or MEMS, and bonding the two substrates by a layer transfer. The method provides an improved monolithic integration of devices such as MEMS with transistors.
申请公布号 US8048766(B2) 申请公布日期 2011.11.01
申请号 US20050561299 申请日期 2005.12.15
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 JOLY JEAN-PIERRE;ULMER LAURENT;PARAT GUY
分类号 H01L21/30;B81B7/00;B81B7/02;H01L21/02;H01L21/20;H01L21/46;H01L21/822;H01L21/98;H01L25/16;H01L27/06;H01L27/08;H01L29/06 主分类号 H01L21/30
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