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发明名称
METHOD OF MANUFACTURING THIN FILM TRANSISTOR
摘要
<p>본 발명은 아몰퍼스 산화물 및 그것을 이용한 박막 트랜지스터에 관한 것이다. 구체적으로는 전자캐리어 농도가 10/㎤ 미만인 아몰퍼스 산화물 및 그것을 이용한 박막 트랜지스터를 제공하는 것이다. 소스 전극(6), 드레인 전극(5), 게이트 전극(4), 게이트 절연막(3) 및 채널층(2)을 가지는 박막 트랜지스터에서 상기 채널층(2)으로 전자캐리어 농도가 10/㎤ 미만인 아몰퍼스 산화물을 이용한다.</p>
申请公布号
KR101078509(B1)
申请公布日期
2011.10.31
申请号
KR20117015612
申请日期
2005.02.28
申请人
发明人
分类号
G02F1/1345;G02F1/1368;H01L21/205;H01L21/363;H01L21/77;H01L21/84;H01L29/786
主分类号
G02F1/1345
代理机构
代理人
主权项
地址
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