METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND PROCESSING APPARATUS FOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor and a processing apparatus for a substrate that uniformly film a plurality of substrates in silicon carbide epitaxial film growth carried out under a high-temperature condition.SOLUTION: The method of manufacturing a semiconductor device in a semiconductor manufacturing apparatus includes a first gas supply nozzle and a second gas supply nozzle provided to be extended in a longitudinal direction, wherein the first gas supply nozzle is provided with a first gas supply port and the second gas supply nozzle is provided with a second gas supply port, and the second gas supply nozzle is installed between the substrate and first gas supply nozzle. The method of manufacturing the semiconductor device includes the processes of: installing the plurality of substrates, stacked and arrayed in a longitudinal direction, into a reaction chamber; supplying a silicon-atom-containing gas and a chlorine-atom-containing gas through the first gas supply port and supplying a carbon-atom-containing gas and a reduction gas through the second gas supply port to form silicon carbide films on substrate surfaces; and taking out the plurality of substrates from the reaction chamber.