| 摘要 |
PROBLEM TO BE SOLVED: To provide an alternative polishing method which is advantageous with respect to an end part surface shape of a semiconductor wafer having been polished.SOLUTION: The present invention relates to the polishing method of the semiconductor wafer using a polishing pad, wherein the polishing pad contains fixed bonded abrasive grains of SiChaving an average grain size of 0.1 to 1.0 μm, an alkaline component and no solid material, and is supplied with a polishing liquid with a variable pH value of 11 to 13.5, and the polishing liquid has a pH value of 13 during polishing treatment, the pH value being increased up to 13 to 13.5 so as to finish the polishing treatment. |
