发明名称 |
REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL |
摘要 |
It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.
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申请公布号 |
US2011259261(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US201113177057 |
申请日期 |
2011.07.06 |
申请人 |
NGK INSULATORS, LTD.;OSAKA UNIVERSITY;TOYODA GOSEI CO., LTD. |
发明人 |
IWAI MAKOTO;HIGASHIHARA SHUHEI;KITAOKA YASUO;MORI YUSUKE;SATO TAKAYUKI;NAGAI SEIJI |
分类号 |
C30B9/06;C30B25/00 |
主分类号 |
C30B9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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