发明名称 REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL
摘要 It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved.
申请公布号 US2011259261(A1) 申请公布日期 2011.10.27
申请号 US201113177057 申请日期 2011.07.06
申请人 NGK INSULATORS, LTD.;OSAKA UNIVERSITY;TOYODA GOSEI CO., LTD. 发明人 IWAI MAKOTO;HIGASHIHARA SHUHEI;KITAOKA YASUO;MORI YUSUKE;SATO TAKAYUKI;NAGAI SEIJI
分类号 C30B9/06;C30B25/00 主分类号 C30B9/06
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