| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having high electrical characteristics with high productivity.SOLUTION: In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wiring functioning as source wiring and drain wiring, the microcrystalline silicon film is formed on the gate insulating film side, and the pair of silicon carbide films are formed on the wiring side. |
