| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus with high operation performance and reliability.SOLUTION: A semiconductor apparatus has: an active layer surrounded by a silicon oxide film provided on a silicon substrate, a silicon oxide film with a film thickness of 0.05-0.5 μm that is obtained by carrying out thermal oxidation to a single crystal silicon substrate before becoming a single crystal island-shaped silicon layer, which includes part of the single crystal silicon substrate and becomes an active layer of a TFT, and that is provided by bonding to the silicon oxide film at a bonding interface, and a silicon oxide film of the other surface provided by carrying out thermal oxidation to an active layer; and a gate electrode provided on the active layer. The single crystal island-shaped silicon layer is obtained by dividing a single crystal silicon substrate, to which hydrogen is introduced via the oxidation silicon film having a film thickness of 0.05-0.5 μm, at a part where the hydrogen is introduced. |
