发明名称 METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION
摘要 There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning.
申请公布号 US2011262872(A1) 申请公布日期 2011.10.27
申请号 US201113073651 申请日期 2011.03.28
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 YOKOYA JIRO;NAKAMURA TSUYOSHI;TAKESHITA MASARU;YOSHII YASUHIRO;SAITO HIROKUNI
分类号 G03F7/20;C07C271/12;C07D211/06 主分类号 G03F7/20
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