发明名称 |
METHOD AND APPARATUS FOR PRODUCING NITRIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a high-quality nitride crystal by which occurrence of steps of crystals is suppressed and there is no generation of inclusion which is a phenomenon of roughness of surface morphology or of intrusion of impurities between steps.SOLUTION: The method for producing the nitride crystal includes: a first step of housing a seed substrate 1, a crystalline material and an alkali metal or alkaline earth metal in a crucible 3; and a second step of forming a flux 2 of the crystalline material and the alkali metal or alkaline earth metal by heating the crucible 3 and supplying nitrogen gas into the crucible 3 to grow a crystal on the seed substrate 1. In a nitride crystal producing apparatus in which the agitating direction of the flux 2 is only repetitive uniaxial direction, Hf (depth of the flux liquid level)/Do (inside diameter of crucible) in the second step is made to be ≥0.3. |
申请公布号 |
JP2011213582(A) |
申请公布日期 |
2011.10.27 |
申请号 |
JP20110054125 |
申请日期 |
2011.03.11 |
申请人 |
PANASONIC CORP |
发明人 |
HATAYAMA TAKESHI;YAMAMOTO TAKEKATSU |
分类号 |
C30B29/38;C01B21/06;C01B21/072;C30B19/04 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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