发明名称 METHOD AND APPARATUS FOR PRODUCING NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a high-quality nitride crystal by which occurrence of steps of crystals is suppressed and there is no generation of inclusion which is a phenomenon of roughness of surface morphology or of intrusion of impurities between steps.SOLUTION: The method for producing the nitride crystal includes: a first step of housing a seed substrate 1, a crystalline material and an alkali metal or alkaline earth metal in a crucible 3; and a second step of forming a flux 2 of the crystalline material and the alkali metal or alkaline earth metal by heating the crucible 3 and supplying nitrogen gas into the crucible 3 to grow a crystal on the seed substrate 1. In a nitride crystal producing apparatus in which the agitating direction of the flux 2 is only repetitive uniaxial direction, Hf (depth of the flux liquid level)/Do (inside diameter of crucible) in the second step is made to be ≥0.3.
申请公布号 JP2011213582(A) 申请公布日期 2011.10.27
申请号 JP20110054125 申请日期 2011.03.11
申请人 PANASONIC CORP 发明人 HATAYAMA TAKESHI;YAMAMOTO TAKEKATSU
分类号 C30B29/38;C01B21/06;C01B21/072;C30B19/04 主分类号 C30B29/38
代理机构 代理人
主权项
地址