Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate

摘要

An SiC substrate (10) includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first alkaline solution. The SiC substrate has the main surface (11), and an average of residues on the main surface (11) are equal to or larger than 0.2 and smaller than 200 in number.