| 摘要 |
The present invention provides a metallization scheme, a method for manufacturing the metallization scheme, and an integrated circuit including the metallization scheme. In one aspect, the metallization scheme ( 300 ) includes a protective layer ( 320 ) located over a substrate ( 310 ), and a conductive layer ( 330 ) located over the protective layer ( 320 ). The metallization scheme ( 300 ) further includes a stress-reducing low-modulus material ( 340 ) located between the protective layer ( 320 ) and the conductive layer ( 330 ). |
