发明名称 |
Structure including a graphene layer and method for forming the same |
摘要 |
A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
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申请公布号 |
US8043687(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080253158 |
申请日期 |
2008.10.16 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
KAMINS THEODORE I.;WILLIAMS R. STANLEY;QUITORIANO NATHANIEL |
分类号 |
B32B9/00;B32B19/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
B32B9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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