发明名称 Structure including a graphene layer and method for forming the same
摘要 A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer.
申请公布号 US8043687(B2) 申请公布日期 2011.10.25
申请号 US20080253158 申请日期 2008.10.16
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 KAMINS THEODORE I.;WILLIAMS R. STANLEY;QUITORIANO NATHANIEL
分类号 B32B9/00;B32B19/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14 主分类号 B32B9/00
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