| 摘要 |
A method for seamless gap filling is provided, including providing a semiconductor structure with a device layer having a gap therein, wherein the gap has an aspect ratio greater than 4. A liner layer is formed over the device layer exposed by the gap. A first un-doped oxide layer is formed over the liner layer in the gap. A doped oxide layer is formed over the first undoped oxide layer in the gap. A second un-doped oxide layer is formed over the doped oxide layer in the gap to fill the gap. An annealing process is performed on the second un-doped oxide layer, the doped oxide layer, and the first un-doped oxide to form a seamless oxide layer in the gap, wherein the seamless oxide layer has an interior doped region.
|
