发明名称 ELECTRODE FOR ENERGY STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 An electrode for an energy storage device with less deterioration due to charge and discharge, and a method for manufacturing thereof are provided. Further, an energy storage device having large capacity and high endurance can be provided. In an electrode of an energy storage device in which an active material is formed over a current collector, the surface of the active material is formed of a crystalline semiconductor film having a {110} crystal plane. The crystalline semiconductor film having a {110} crystal plane may be a crystalline silicon film containing a metal element which reacts with silicon to form a silicide. Alternatively, the crystalline semiconductor film having a {110} crystal plane may be a crystalline semiconductor film containing silicon as its main component and also containing germanium and a metal element which reacts with silicon to form a silicide.
申请公布号 KR20110115964(A) 申请公布日期 2011.10.24
申请号 KR20110033697 申请日期 2011.04.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KURIKI KAZUTAKA;MORIWAKA TAMAE;MURAKAMI SATOSHI;YAMAZAKI SHUNPEI
分类号 H01G9/04;H01G11/06;H01G11/22;H01G11/30;H01G11/42;H01G11/48;H01M4/134;H01M4/1395;H01M4/36;H01M4/66;H01M10/0525 主分类号 H01G9/04
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