发明名称 PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER
摘要 The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.
申请公布号 US2011253673(A1) 申请公布日期 2011.10.20
申请号 US201113172917 申请日期 2011.06.30
申请人 LAM RESEARCH CORPORATION 发明人 NI TUQIANG;LIN FRANK Y.;HUANG CHUNG-HO;JIANG WEINAN
分类号 C23F1/00;C23F1/08;H01J37/32 主分类号 C23F1/00
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