发明名称 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION
摘要 Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
申请公布号 US2011256726(A1) 申请公布日期 2011.10.20
申请号 US201113084399 申请日期 2011.04.11
申请人 LAVOIE ADRIEN;SWAMINATHAN SHANKAR;KANG HU;CHANDRASEKHARAN RAMESH;DORSH TOM;HAUSMANN DENNIS M;HENRI JON;JEWELL THOMAS;LI MING;SCHLIEF BRYAN;XAVIER ANTONIO;MOUNTSIER THOMAS W;VAN SCHRAVENDIJK BART J;SRINIVASAN EASWAR;SRIRAM MANDYAM 发明人 LAVOIE ADRIEN;SWAMINATHAN SHANKAR;KANG HU;CHANDRASEKHARAN RAMESH;DORSH TOM;HAUSMANN DENNIS M.;HENRI JON;JEWELL THOMAS;LI MING;SCHLIEF BRYAN;XAVIER ANTONIO;MOUNTSIER THOMAS W.;VAN SCHRAVENDIJK BART J.;SRINIVASAN EASWAR;SRIRAM MANDYAM
分类号 H01L21/311;B05C5/00;B32B38/08;C23F1/02;H01L21/306;H01L21/31 主分类号 H01L21/311
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