| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device that prevents a migration phenomenon of metal, and to provide a method of manufacturing the semiconductor device.SOLUTION: The semiconductor device 1 includes: a plurality of re-wiring lines 19 formed on an upper surface of a semiconductor substrate 11 having a plurality of connection terminals 12 and each having one end connected to a connection terminal 12; a plurality of columnar electrodes 21 each formed on an other upper surface of a re-wiring line 19; an insulating film 15 covering at least side faces of the re-wiring lines 19 and side faces of the columnar electrodes 21 and exposing upper surfaces of the columnar electrodes 21; and a sealing film 22 which seals a surface of the insulating film 15 and exposing the upper surfaces of the columnar electrodes 21. The insulating film 15 is formed by applying and curing a resin material. |
